Selective plasma vapor etching process

Details Selective plasma vapor etching process Selective plasma vapor etching process

1979-01-04

1980-07-22

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156657, 156345, 204164, 204192E, 252 791, H01L 21306, C23F 102

Patent

active

042138183

ABSTRACT:
Selective plasma vapor etching process for performing operations on a solid body formed of at least two different materials capable of being vapor etched exposed at, at least, one surface of the body, with the body being disposed in a chamber having a partial vacuum therein. A gas plasma is created within the chamber to produce active species of atoms and molecules so that these species come into contact with the surface of the body to chemically react at least one of the materials with active species from the gas plasma to form a gas-non-gaseous chemical reaction by controlling the concentration and reaction kinetics of specific species, and by controlling the activation energy of the etching reactions to produce a difference in rates between the materials so that the etching is more selective to one material over the other. The species is also controlled by the frequency of the electromagnetic energy.

REFERENCES:
patent: 3615956 (1971-10-01), Irving et al.
patent: 3679502 (1972-07-01), Hays
patent: 3971684 (1976-07-01), Muto

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