Solder-bonded structure

Details Solder-bonded structure Solder-bonded structure

1994-03-18

1996-02-06

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257734, 257741, 257748, 257762, 257768, H01L 2348, H01L 2944, H01L 2952, H01L 2912

Patent

active

054898030

ABSTRACT:
An improved solder-bonding structure is disclosed that is particularly suitable for soldering the components of hybrid ICs. The solder-bonding structure includes a conductor formed on a substrate. The conductor is formed from silver and platinum. A solder layer formed from a tin and silver solder is then formed on the conductor to couple an electronic element to the conductor. In preferred aspects of the invention, the platinum content in the conductor is in the range of approximately 0.7 to 1.0% by weight. The silver content in the solder layer is in the range of approximately 0.1 to 5.0% by weight.

REFERENCES:
patent: 4124455 (1978-11-01), Lindmayer
patent: 4266090 (1981-05-01), Scherer
patent: 4480261 (1984-10-01), Hattori et al.
Thesis for the 4th Microelectronics Symposium in Tokyo, Japan, "High Reliability of Solder Joint on Hybrid Circuit" by Masakata Kanbe, Hitoshi Iwata, Katsuya Kogiso, Shouichi Ohya.
"The Role of Thin Film Materials on the Technology of Integrated Circuit Fabrication " Federico Sequeda, Journal of Metals Nov. 1985.

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