Integrated circuit resistor comprising amorphous silicon

Details Integrated circuit resistor comprising amorphous silicon Integrated circuit resistor comprising amorphous silicon

1995-01-06

1996-02-06

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257537, 257904, H01L 2702, H01L 2710, H01L 4500

Patent

active

054897963

ABSTRACT:
The device hereof provides an integrated circuit resistor (34) comprising amorphous or noncrystalline semiconducting material. Further advantages can be gained in area by forming the noncrystalline semiconductor resistor in a non-planar fashion (i. e. with a vertical construction) wherein a first electrical contact is made to the resistor on its bottom surface and a second electrical contact is made to the resistor on its top surface.
Other devices, systems and methods are also disclosed.

REFERENCES:
patent: 4755480 (1988-07-01), Yau et al.
patent: 4914055 (1990-04-01), Gordon et al.
patent: 5047826 (1991-09-01), Keller et al.
patent: 5070383 (1991-12-01), Sinar et al.
"Polysilicon Vertical Resistors", S. A. Abbas, IBM Technical Disclosure Bulletin, vol. 23, No. 5, Oct., 1980.
"A Novel Ion-Implanted Amorphous Silicon Programmable Element" Shacham-Diamond et al., International Electron Devices Meeting, 1987, pp. 194-197.
"The Electrical Properties of Ion-Implanted Amorphous Silicon Programmable Element . . . " Shacham-Diamond et al., IEEE Trans./Electron Devices, V. 37, No. 1, Jan. 1990, pp. 159-167.

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