Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1993-07-23
1997-09-16
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438164, H01L 2184
Patent
active
056680198
ABSTRACT:
An Si thin film (2) for a channel is formed on an insulating substrate (1), and then a gate insulating film (3) made principally of SiO.sub.2 is formed thereon. On the gate insulating film (3) is formed a gate electrode (4) composed of a Si thin film doped with impurities. The gate electrode (4) is patterned by isotropic etching using a photoresist (11) as a mask, and the gate insulating film (3) is patterned by anisotropic etching using the photoresist (11) as a mask into a configuration wider than the gate electrode (4) to be removed from source/drain regions position. The Si thin film (2) is ion implanted with impurities to form source/drain regions of an offset structure. A thin film transistor having an offset or LDD structure and capable of reducing an off-state drain current is fabricated without the need for increased number of masks and for an accurate photolithography technique, such as in alignment accuracy between masks.
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Kobayashi Kazuhiro
Masutani Yuichi
Murai Hiroyuki
Sakamoto Takao
Booth Richard A.
Mitsubishi Denki & Kabushiki Kaisha
Niebling John
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