Thermally stable ohmic contact for gallium-arsenide

Details Thermally stable ohmic contact for gallium-arsenide Thermally stable ohmic contact for gallium-arsenide

1987-03-16

1989-01-03

Edlow, Martin H.

Fishing, trapping, and vermin destroying

357 16, 357 67, 437184, 437190, 437192, H01L 29161, H01L 2348

Patent

active

047960825

ABSTRACT:
A thermally stable low resistance ohmic contact to gallium arsenide is fabricated using a layer of refractory material, and a layer of indium and a metal which forms thermally stable intermetallic compounds or single solid phase with indium. In forming the contact, a layer of indium is sandwiched between two layers of nickel, the sandwiched array of layers sitting on the substrate with the refractory tungsten layer on top to form a stratified structure. The stratified structure is heated to form nickel and indium intermetallic compounds and InGaAs layer at the metal/semiconductor interface. A thin layer of nickel between the indium and the gallium arsenide tends to form intermetallic compounds and limit a rate of diffusion of the indium into the gallium arsenide during heating so as to form a uniform fine distribution of InGaAs layer at the metal/gallium arsenide interface which results in low contact resistance. A contact resistance of 0.3 ohm-millimeters is obtained at elevated temperature in the range of 700.degree.-1200.degree. C. The resistance is stable after annealing at 400.degree. C. for 100 hours.

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