Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-05-06
1994-12-06
Loke, Steven Ho Yin
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257357, 257360, 257362, H01L 2362
Patent
active
053713958
ABSTRACT:
An electrostatic discharge (ESD) protection device for protecting a high voltage operating circuit having a high voltage input terminal is disclosed. The ESD protection circuit has a substrate, a first diffusion region formed in the substrate connected to the high voltage input terminal, a second diffusion region formed in the substrate connected to ground, a field oxide layer over the substrate having a thickened region extending into the substrate between the first and second diffusion regions, and a drift region formed in the substrate and located between the first diffusion region and the thickened field oxide layer. These regions are so arranged to move the point of avalanche breakdown away from the first diffusion/field oxide interface, so that the avalanche breakdown voltage is lower than that of the protected circuit while simultaneously preventing avalanche included bipolar feedback in the protection device.
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Loke Steven Ho Yin
Xerox Corporation
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