Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-12-18
2000-12-12
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438680, 438682, 438766, H01L 2144
Patent
active
061598569
ABSTRACT:
A refractory metal film such as a cobalt (Co) film of 10 nm in thickness is formed on a silicon substrate. Ion implantation of silicon ions is then performed through the cobalt film with energy of 10 keV and a dose of 3.times.10.sup.16 /cm.sup.2. Through the silicon ion implantation, silicon atoms are implanted in the cobalt film while crystal damage is produced in silicon crystal at a cobalt/silicon interface. The crystal damage allows silicon atoms consumed for a silicidation reaction for forming a cobalt silicide film to exist as atoms not forming a crystal. Activation energy for the silicidation reaction is thus reduced. The reaction for silicidation is completed in a short time. As a result, a reduction in thickness of the cobalt film due to surface oxidation is suppressed. A thick cobalt silicide film is formed as well without reducing the amount of cobalt consumed for silicidation. Sheet resistance of the cobalt silicide film is thus reduced.
REFERENCES:
patent: 4558507 (1985-12-01), Okabayashi et al.
patent: 5217923 (1993-06-01), Suguro
Berry Renee R.
Nelms David
Sony Corporation
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