Method of depositing polysilicon, method of fabricating a field

Details Method of depositing polysilicon, method of fabricating a field Method of depositing polysilicon, method of fabricating a field

1998-02-13

2000-12-12

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438680, 438684, H01L 214763

Patent

active

061598526

ABSTRACT:
In a method of depositing polysilicon comprises providing a substrate within a chemical vapor deposition reactor, with the substrate having an exposed substantially crystalline region and an exposed substantially amorphous region. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to selectively deposit polysilicon on the crystalline region and not the amorphous region. In another aspect a method of fabricating a field effect transistor on a substrate comprises forming a gate dielectric layer and a gate over semiconductive material. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the source/drain regions and not on amorphous material, and forming elevated source/drains on the doped source/drain regions. In another aspect, a method of forming a contact to a substrate is disclosed. A contact opening is etched through amorphous insulating material over a node location ultimately comprising an outwardly exposed substantially crystalline surface. Within a chemical vapor deposition reactor, a gaseous precursor comprising silicon is provided under conditions effective to selectively deposit polysilicon on the outwardly exposed crystalline node location surface and not on the insulating material.

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