Method of fabricating landing pad

Details Method of fabricating landing pad Method of fabricating landing pad

1999-06-09

2000-12-12

Booth, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438632, 438633, 438626, 438612, 438618, 438253, 438597, 438706, 438719, H01L 214763, H01L 2144, H01L 21302, H01L 218242

Patent

active

061598437

ABSTRACT:
A method of fabricating a landing pad. A gate electrode is formed on a substrate. The gate electrode has a top surface covered by a cap layer and a sidewall covered by a spacer. A polysilicon layer is formed to cover the gate. Using an oxygen based etchant to performed an isotropic chemical dry etching on the polysilicon layer, the polysilicon layer is planarized until a part of the spacer is exposed. The polysilicon layer is patterned to form a landing pad in contact with the substrate.

REFERENCES:
patent: 4431477 (1984-02-01), Zajac
patent: 5591302 (1997-01-01), Shinohara et al.
patent: 5780339 (1998-07-01), Liu et al.
patent: 5945350 (1999-08-01), Violette et al.

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