Method for forming programmable contact structure

Details Method for forming programmable contact structure Method for forming programmable contact structure

1995-05-08

2000-12-12

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438131, 438467, H01L 2900

Patent

active

061598364

ABSTRACT:
A programmable semiconductor contact structure and method are provided. A semiconductor substrate has a first patterned conductive layer for forming an interconnect. A first insulating layer overlies the first patterned conductive layer. An opening is formed through the insulating layer to the first patterned conductive layer to form the contact via. A buffer layer overlies portions of the first insulating layer and covers the opening. A second conductive layer overlies the buffer layer. A third conductive layer then overlies the integrated circuit. The buffer layer is a material, such as amorphous silicon, which functions as an anti-fuse and can be programmed by application of a relatively high programming voltage.

REFERENCES:
patent: 4203123 (1980-05-01), Shanks
patent: 4471376 (1984-09-01), Morcom et al.
patent: 4651409 (1987-03-01), Ellsworth et al.
patent: 4823181 (1989-04-01), Mohsen et al.
patent: 4872050 (1989-10-01), Okamoto et al.
patent: 5095362 (1992-03-01), Roesner
patent: 5100827 (1992-03-01), Lytle
patent: 5120679 (1992-06-01), Boardman et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5272101 (1993-12-01), Forouhi et al.
patent: 5272666 (1993-12-01), Tsang et al.
patent: 5403778 (1995-04-01), Kwok et al.
Patent Abstract of Japan, vol. 17, No. 398 (E-1403), Jul. 26, 1993 and JP-A-50 74 947 (Fujitsu Ltd.), Mar. 26, 1993.
Richard Wong et al., "Evaluating the Reliability of the QuickLogic Antiguse", Electronic Engineering, No. 786, Woolwich, London, Great Britain, Jun. 1992, pp. 49, 51, 53, 54 and 56.

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