Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-01-05
1994-04-19
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257133, 257146, 257154, 257173, 257336, 257337, 257359, 257362, 257363, 257603, H01L 2910, H01L 2978, H01L 2906
Patent
active
053048024
ABSTRACT:
A semiconductor device including a switching device such as a MOSFET or an IGBT, and an avalanche device for protecting the switching device by generating an avalanche current when an overvoltage is applied to the switching device. The avalanche device shares a drift layer, that is, an epitaxial layer with the switching device. With this arrangement, the avalanche voltage of the avalanche device follows changes in the withstanding voltages of the switching device due to variations in the thickness or impurity concentration of the epitaxial layer or temperature. This makes it possible to reduce the margin between the avalanche voltage of the avalanche device and the withstanding voltage of the switching device, and to positively protect the switching device from damage.
REFERENCES:
patent: 4705322 (1987-11-01), Yiannoulos
patent: 4980741 (1990-12-01), Temple
patent: 5045902 (1991-09-01), Bancal
patent: 5079608 (1992-01-01), Wodarczyk et al.
patent: 5138415 (1992-08-01), Yano
patent: 5162966 (1992-11-01), Fujihira
Fuji Electric & Co., Ltd.
Ngo Ngan
LandOfFree
Semiconductor device including overvoltage protective circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device including overvoltage protective circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including overvoltage protective circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-21637