Process for fabricating a semiconductor device

Details Process for fabricating a semiconductor device Process for fabricating a semiconductor device

1982-10-21

1984-02-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 2, 134 39, 156646, 156651, 156657, 156663, 204192E, 252 791, 252 795, B44C 122, C03C 1500, C03C 2506

Patent

active

044301529

ABSTRACT:
A metal layer exposed by dry etching a phosphosilicate glass (PSG) layer covering the metal layer is insufficiently reliable when an electrical connection is made by bonding wire to the metal layer or depositing another metal layer on the metal layer. This insufficiency is due to the presence of a phosphorous residue on the surface of the exposed metal layer. The phosphorous residue is preferably removed by treating the surface of the metal layer with an alkaline solution so that the PSG layer, the metal layer, and the semiconductor device in which the connection is made are not affected.

REFERENCES:
patent: 4354897 (1982-10-01), Nakajima

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