Non-volatile semiconductor memory device with improved rewrite s

Details Non-volatile semiconductor memory device with improved rewrite s Non-volatile semiconductor memory device with improved rewrite s

1995-09-07

1997-06-17

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, 257324, 257314, H01L 2968

Patent

active

056400322

ABSTRACT:
A non-volatile semiconductor memory device comprises a semiconductor substrate, a shield gate electrode formed over a device isolation region of the semiconductor substrate through a shield gate insulating film, a floating gate electrode formed over a device region of the semiconductor substrate through a tunnel insulating film, the device region lying adjacent to the device isolation region and a part of the floating gate electrode overlapping the device isolation region so as to form a gap region therebetween, and a control gate electrode formed over the floating gate electrode through an oxide
itride/oxide (ONO) film and formed over the shield gate electrode through a shield cap insulating film such that a part of the control gate electrode extends into the gap region.

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patent: 5245212 (1993-09-01), Gill
patent: 5268585 (1993-12-01), Yamauchi
patent: 5278448 (1994-01-01), Fujii
patent: 5284786 (1994-02-01), Sethi
patent: 5378910 (1995-01-01), Yoshikawa
patent: 5475251 (1995-12-01), Kuo et al.
patent: 5498890 (1996-03-01), Kim et al.
patent: 5502334 (1996-03-01), Shinohara

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