Method for producing a semiconductor laser device having a burie

Details Method for producing a semiconductor laser device having a burie Method for producing a semiconductor laser device having a burie

1986-02-19

1987-09-08

Kellogg, Arthur

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 357 15, 357 16, 357 17, 357 56, 372 44, 372 45, 372 46, H01S 318

Patent

active

046922067

ABSTRACT:
A method for producing a semiconductor laser device having a buried heterostructure includes a multi-layered crystal structure, containing an active layer for laser oscillation, on a p-substrate, said multi-layered crystal structure having a striped mesa-portion, a p-n-p multi-layered structure surrounding said mesa-portion and a burying layer disposed on an upper face of said striped mesa-portion. The unique structure results in a heterojunction at each of both side faces of said active layer in said mesa-portion.

REFERENCES:
patent: 4048627 (1977-09-01), Ettenberg
patent: 4416012 (1983-11-01), Botez et al.
InP/GaInAsP Buried Heterostructure Lasers of 1.5 .mu.m Region, H. Nagai et al., Japanese Journal of Applied Physics, vol. 19, No. 4, (Apr. 1980), pp. L218-L220.

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