Plasma apparatus

Coating apparatus – Gas or vapor deposition – With treating means

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Details

118715, 118723R, 118723FI, 156345, 20429831, 20429836, 20429837, 250423R, 31511141, 31511171, 31511181, C23C 1648, C23F 102, H05H 116, H01J 2720

Patent

active

056393083

ABSTRACT:
A plasma apparatus generates plasma by introducing electron beams into a processing chamber filled with a reactive gas for irradiation of the reactive gas with the introduced electron beams, to process a substance by the generated plasma. The plasma apparatus has a sample base for mounting the substance to be processed so that a processing surface of the substance is not directed in a direction perpendicular to a travel direction of the electron beams introduced into the processing chamber; a suppressing section for suppressing divergence of the electron beams introduced into the processing chamber; and a control section for controlling current density distribution of the divergence-suppressed electron beams so that current density distribution of ions contained in the plasma can be uniformalized on the substance to be processed.

REFERENCES:
patent: 4657619 (1987-04-01), O'Donnell
patent: 4749910 (1988-06-01), Hara et al.
patent: 5009922 (1991-04-01), Harano et al.
patent: 5217761 (1993-06-01), Okada et al.
patent: 5340621 (1994-08-01), Matsumoto et al.

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