Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1981-05-11
1982-09-14
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156345, 156646, 156653, 204192E, 204298, H01L 21302, B44C 122, C03C 1500, C03C 2506
Patent
active
043494099
ABSTRACT:
A method and an apparatus for plasma etching semiconductor materials by providing an intermediate electrode between the electrodes in a parallel state type plasma etching apparatus, moving the intermediate electrode by a drive mechanism, and continuously changing from a condition of high input power and high self-bias voltage to a condition of low input power and low self-bias voltage while varying the distance between the intermediate electrode and the first electrode and the RF power, thereby to remove damage or deposits that may have been formed on the surface when the semiconductor material was being subjected to processing.
REFERENCES:
patent: 4174251 (1979-11-01), Paschke
patent: 4233109 (1980-11-01), Nishizawa
Patent Abstracts of Japan, vol. 4, No. 71, May 24, 1980, p. 10e12, Dry Etching Device, Appl. No. 53-111257, Fu, Itsu K. K. Kouichi Kobayashi
Journal of the Electrochemical Society, vol. 126, No. 6, Jun. 1979, pp. 1024-1028, The Roles of Ions and Neutral Active Species in Microwark Plasma Etching, Suzuki et al.
Ion beam etching, Harper et al., Abstract No. 284.
Journal of the Electrochemical Society, vol. 80-1, May 1980, pp. 716-717, Low Energy Ion Beam Etching, Harper et al.
Hisatsugu Tokushige
Kobayashi Koichi
Kosugi Makoto
Ogawa Tetsuya
Shibayama Hikou
Fujitsu Limited
Powell William A.
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