Semiconductor capacitor with a metal nitride film and metal oxid

Details Semiconductor capacitor with a metal nitride film and metal oxid Semiconductor capacitor with a metal nitride film and metal oxid

1990-11-15

1993-02-16

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

361313, H01L 2702, H01L 2348, H01L 2968, H01G 406

Patent

active

051875578

ABSTRACT:
A semiconductor device having a capacitor part which is composed of the first electrode including a first titanium nitride film, a dielectric layer and a second electrode including a second titanium nitride film, the titanium nitride film being sandwiched between the dielectric layer and the first and second electrodes, whereby it is possible to obtain a capacitor having a high capacitance value and which can inhibit the reaction between the dielectric layer and the electrode and which does not result in an increase in a leakage current of the dielectric layer and a deterioration of isolation voltage.

REFERENCES:
Shinriki et al., "Oxidized Ta.sub.2 O.sub.5 /Si.sub.3 N.sub.4 Dielectric Films for Ultimate-STC dRams", IEDM Tech. Digest, 1986, pp. 684-687.
Shinriki et al., "Ta.sub.2 O.sub.5 Capacitor Technology Compatible with Advanced VLSI Process", Technical Digest of 1988 Symposium on VLSI Technology (1988).

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