Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1995-06-02
1997-03-04
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257769, 257757, H01L 2348, H01L 2352, H01L 2940
Patent
active
056082665
ABSTRACT:
A method and a device directed to the same, for stabilizing cobalt silicide/single crystal silicon, amorphous silicon, polycrystalline silicon, germanide/crystalline germanium, polycrystalline germanium structures or other semiconductor material structures so that high temperature processing steps (above 750.degree. C.) do not degrade the structural quality of the cobalt silicide/silicon structure. The steps of the method include forming a silicide or germanide by either reacting cobalt with the substrate material and/or the codeposition of the silicide or germanide on a substrate, adding a selective element, either platinum or nitrogen, into the cobalt and forming the silicide germanide by a standard annealing treatment. Alternatively, the cobalt silicide or cobalt germanide can be formed after the formation of the silicide or germanide respectively. As a result, the upper limit of the annealing temperature at which the silicide or germanide will structurally degrade is increased.
REFERENCES:
patent: 4322453 (1982-03-01), Miller
patent: 4663191 (1987-05-01), Choi et al.
patent: 4707197 (1987-11-01), Hensel et al.
patent: 4907052 (1990-06-01), Takada et al.
patent: 4946803 (1990-08-01), Ellwanger
patent: 5041391 (1991-08-01), Ono
patent: 5075251 (1991-12-01), Torres et al.
patent: 5302552 (1994-04-01), Duchateau et al.
Jiang et al, "Ultra Shallow Junction Formation Using Diffusion From Silicide", J. Electr. Soc. vol. 139, No. 1, Jan. 1992.
"Comparison of Transformation to Low-Resistivity Phase and Agglomeration of TiSi.sub.2 and Co/Si.sub.2 " Lasky et al, IEE Trans of Electron Devices, vol. 38, No. 2, Feb. 1991 pp. 262-269.
"Quantum Transport in Ultra Thin Co/Si.sub.2 Epitaxal Films"--DiTusa et al--1990 American Institute of Physics pp. 452-454--Appl. Phy. Lett.(5) 30 Jul. 1990.
A. Nishiyama, Y. Akasaka, Y. Ushiku, K. Hishioka, Y. Suizu and M. Shiozaki, A Thermally Stable Salicide Process Using N.sub.2 Implantation into TiSi.sub.2, "IEEE 1990", (Jun. 12-13, 1990 VMIC Conference), pp. 310-316.
R. V. Joshi, High Conductivity Multiphase Metal-Silicide Alloy, "IBM Technical Disclosure Bulletin", vol. 30, No. 7, (Dec. 1987).
K. W. Choi and S. Roberts, Improved Salicide Process With Multilayer Silicide Formation, "IBM Technical Disclosure Bulletin", vol. 27, No. 7B, (Dec. 1984).
Bin-Shing Chen et al., "Formation of cobalt-silicided p+n junctions using implant through silicide technology", Journal of Applied Physics, Nov. 15, 1992, vol. 72, No. 10, pp. 4619-4626, USA.
K. T. Ho et al., "Application of Nitrogen in a Cobalt-Silicide-Forming System", Thin Solid Films, May 24, 1985, vol. 127, No. 3-4, pp. 313-322, Switzerland.
1991 European Workshop on Refractory Metals and Silicides, Saltsjobaden, Sweden, Mar. 24-27, 1991, S. Nygren et al., "Morphological Instabilities of Nickel and Cobalt Silicides on Silicon", Applied Surface Science, 1991, vol. 53, pp. 87-91, Netherlands.
Agnello Paul D.
Cabral, Jr. Cyril
Clevenger Lawrence A.
Copel Matthew W.
D'Heurle Francois M.
Clark S. V.
Crane Sara W.
International Business Machines - Corporation
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