Reverse current flow prevention in a diffused resistor

Details Reverse current flow prevention in a diffused resistor Reverse current flow prevention in a diffused resistor

1994-03-02

1997-03-04

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With pn junction isolation

257540, 257546, H01L 2900

Patent

active

056082592

ABSTRACT:
An IC is constructed with deep layers preventing current flow due to parasitic transistors formed within the IC. Reverse current in case of voltage source polarity reversal is prevented by means of the reverse bias diodes formed by the addition of a P+ ring, and N+ well, for the embodiment disclosed.

REFERENCES:
patent: 3430110 (1969-02-01), Goshgarian
patent: 4085382 (1978-04-01), Barber et al.
patent: 4117507 (1978-09-01), Pacor

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