Thin film semiconductor integrated circuit and method of fabrica

Details Thin film semiconductor integrated circuit and method of fabrica Thin film semiconductor integrated circuit and method of fabrica

1996-04-02

1997-03-04

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257410, 257 59, H01L 2976, H01L 2701, H01L 2713

Patent

active

056082517

ABSTRACT:
In a semiconductor integrated circuit, a plurality of thin film transistors (TFTs) are formed on the same substrate having an insulating surface. Since gate electrodes formed in the TFTs are electrically insulated each other, voltages are applied independently to gate electrodes in an electrolytic solution during an anodization, to form an anodic oxide in at least both sides of each gate electrode. A thickness of the anodic oxide is changed in accordance with characteristics of the TFT. A width of high resistance regions formed in an active layer of each TFT is changed by ion doping using the anodic oxide having a desired thickness as a mask.

REFERENCES:
patent: 5308998 (1994-05-01), Yamazaki
patent: 5323042 (1994-06-01), Matsumoto
patent: 5341012 (1994-08-01), Misawa et al.
patent: 5412493 (1995-05-01), Kunii et al.

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