Patent
1980-10-29
1983-05-24
Munson, Gene M.
357 24M, 357 30, H01L 2978, H01L 2714, H01L 3100
Patent
active
043853072
ABSTRACT:
A so-called buried channel type solid state image sensing device is formed with a channel layer of the opposite conductivity type in the surface of a semiconductor substrate. An insulating layer is formed on the surface of the semiconductor substrate and spaced apart photo-electrode and a charge transfer electrode are buried in the insulating film and a shift electrode is buried therebetween. A channel layer is provided beneath the photoelectrode and the charge transfer electrode whereas no channel layer is formed beneath the shift electrode. But instead a portion of the surface of the semiconductor substrate is located beneath the shift electrode. Since no channel layer is provided beneath the shift electrode, a sufficient quantity of charge carriers is accumulated in a potential well formed in the channel layer beneath the photoelectrode.
REFERENCES:
patent: 3856989 (1974-12-01), Weimer
patent: 3866067 (1975-02-01), Amelio
patent: 3896474 (1975-07-01), Amelio et al.
patent: 3896485 (1975-07-01), Early
patent: 3995302 (1976-11-01), Amelio
patent: 4001878 (1977-01-01), Weimer
patent: 4028716 (1977-06-01), van Santen et al.
patent: 4143389 (1979-03-01), Kolke et al.
patent: 4155094 (1979-05-01), Ohba et al.
Munson Gene M.
Tokyo Shibaura Electric Co. Ltd.
LandOfFree
Solid state image sensing device for enhanced charge carrier acc does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Solid state image sensing device for enhanced charge carrier acc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solid state image sensing device for enhanced charge carrier acc will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2148066