Storage capacitor structures using CVD tin on hemispherical grai

Details Storage capacitor structures using CVD tin on hemispherical grai Storage capacitor structures using CVD tin on hemispherical grai

1995-05-15

1997-03-04

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257309, 257310, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

056082479

ABSTRACT:
An embodiment of the present invention depicts a storage capacitor comprising: a bottom plate structure having a hemispherical grain silicon surface; a titanium nitride layer adjacent and coextensive the hemispherical grain silicon; an insulating layer adjacent and coextensive the titanium nitride layer; and a top plate structure comprising conductively doped polysilicon layer superjacent and coextensive the insulating layer.

REFERENCES:
patent: 5110752 (1992-05-01), Lu
patent: 5111355 (1992-05-01), Anand et al.
patent: 5312768 (1994-05-01), Gonzalez
patent: 5418180 (1995-05-01), Brown

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