Semiconductor memory device having means for monitoring bias vol

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365201, 365226, G11C 1140, G11C 700

Patent

active

054446597

ABSTRACT:
A semiconductor memory device having a power supply terminal, a circuit ground, a plurality of memory cells for storing data, bias voltage generating means connected between the power supply terminal and circuit ground, for applying a bias voltage to the memory cells, and monitor means for monitoring the bias voltage.

REFERENCES:
patent: 4418403 (1983-11-01), O'Toole et al.
patent: 4584663 (1986-04-01), Tanikawa
patent: 4587640 (1986-05-01), Saitoh
patent: 4636983 (1987-01-01), Young et al.
patent: 4720818 (1988-01-01), Takeguchi
patent: 4839865 (1989-06-01), Sato et al.
patent: 4839865 (1989-06-01), Sato et al.
patent: 4982364 (1991-01-01), Iwahashi
patent: 5046052 (1991-09-01), Miyaji et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device having means for monitoring bias vol does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having means for monitoring bias vol, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having means for monitoring bias vol will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2146813

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.