Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1994-01-25

1995-05-23

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Capacitors

365 94, 365102, G11C 1124, G11C 1700

Patent

active

054187397

ABSTRACT:
A semiconductor memory device having typical DRAM memory cells and voltage lines selectively connected to the memory cells, functions as a ROM in which the stored data are partly rewritten to other data while the data in the memory cells having contact with the voltage line are used as common data. In the memory cells having contact with the voltage line, the voltage line, such a power supply line or a ground line, charges or discharges the bit line, whose voltage level is to be read out as stored data in lieu of actual stored data in the capacitor of the memory cell. The memory cell having contact with the voltage line functions as a ROM cell whereas the memory cell having no contact with the voltage line functions as a DRAM cell. ROM cells and DRAM cells on one chip are set arbitrarily by users, and read cycle operation of this memory device is performed with a high speed in the same manner as the read cycle operation of a typical DRAM.

REFERENCES:
patent: 5062077 (1991-10-01), Takashima et al.
patent: 5148063 (1992-09-01), Hotta

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