Memory cell evaluation semiconductor device, method of fabricati

Details Memory cell evaluation semiconductor device, method of fabricati Memory cell evaluation semiconductor device, method of fabricati

1998-07-09

1999-11-02

Phan, Trong

Static information storage and retrieval

Read/write circuit

Differential sensing

365149, G11C 702, G11C 1124

Patent

active

059782943

ABSTRACT:
A dummy cell part <31> includes a capacitor <311> having a first end which is connected to one of a plurality of pads <2> and a P-N junction element <312> having a first end which is connected to one of the plurality of pads <2> and a second end which is connected to one of the plurality of pads <2>. A sense part <32> is connected to a second end of the capacitor <311>, for sensing a potential on the second end of the capacitor <311> and outputting the result of sensing to one of the plurality of pads <2>. Thus, a memory cell evaluation semiconductor device which can evaluate a single memory cell, a method of fabricating the same and a memory cell evaluation method are obtained.

REFERENCES:
patent: 4231109 (1980-10-01), Ono et al.
patent: 5793671 (1998-08-01), Selcuk
patent: 5822240 (1998-10-01), Yoo

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