LDD type MOS transistor

Details LDD type MOS transistor LDD type MOS transistor

1994-06-07

1995-05-23

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257388, 257408, 257402, 257412, H01L 2978

Patent

active

054183928

ABSTRACT:
A gate electrode comprises a N.sup.+ type polysilicon film and N.sup.- type polysilicon films directly contacted with side of the N.sup.+ type polysilicon film. Under the N.sup.+ type polysilicon films, N.sup.- type source.drain regions are provided in a P type silicon substrate to be coplanar with the main surface thereof.

REFERENCES:
patent: 5256586 (1993-10-01), Choi et al.
A New Degradation Mechanism of Current Drivability And Reliability Of Asymmetrical LLDMOSFET's T. Mizuno, Y. Matsumoto, S. Sawada, S. Shinozaki, And O. Ozawa "IDEM Technical Digest", Jan. 1985--pp. 250 To 253.
Tomohisa Mizuno, et al., High Dielectric LDD Spacer Technology for High Performance MOSFET Using Gate-Fringing Field Effects. IEDM (1989) pp. 613-615.
A. Shimizu, et al., High Drivability and High Reliability MOSFETs with Non-Doped Poly-Si Spacer LDD Structure (SLDD). Symposium on VLSI Technology Digest of Technical Papers (1992) pp. 90-91.
Tiao-yuan Huang, et al., A Novel Submicron LDD Transistor With Inverse-T Gate Structure. IEDM (1986) pp. 742-745.

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