Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-07-01
1999-11-02
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257341, 257773, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
059775874
ABSTRACT:
A perimeter gate wiring 52 comprises a contact portion 54 and an interconnecting portion 56 having narrower width than the contact portion 54 which connects the contact portion 54 mutually. And the perimeter gate wiring 52 is connected electrically with the gate perimeter portion 66 at the contact portion 54. A source wiring perimeter portion 58 comprises a contact portion 60 and an interconnecting portion 62 having narrower width than the contact portion 60 which connects the contact portion 60 mutually. And the source wiring perimeter portion 58 is connected electrically with a perimeter diffusion layer 74 in the contact portion 60. The contact portion 54 of the perimeter gate wiring 52 and the interconnecting portion 62 of the source wiring perimeter portion 58 are provided adjacently. Also, the interconnecting portion 56 of the perimeter gate wiring 52 and the contact portion 60 of the source wiring perimeter portion 58 are provided with one another adjacently. So that, it is possible to narrow a width of both the perimeter gate wiring 52 and the source wiring perimeter portion 58 with maintaining contact between the gate perimeter portion 66 and the like.
REFERENCES:
patent: 4045811 (1977-08-01), Dingwall
patent: 5089874 (1992-02-01), Deguchi et al.
patent: 5174858 (1992-12-01), Yamamoto et al.
patent: 5309023 (1994-05-01), Motonami et al.
patent: 5432381 (1995-07-01), Melzner
patent: 5504029 (1996-04-01), Murata et al.
patent: 5519241 (1996-05-01), Oppermann et al.
patent: 5614762 (1997-03-01), Kanamori et al.
patent: 5631484 (1997-05-01), Tsoi et al.
patent: 5672894 (1997-09-01), Maeda et al.
patent: 5719429 (1998-02-01), Yoshida et al.
patent: 5744854 (1998-04-01), Okada et al.
Cao Phat X.
Chaudhuri Olik
Rohm & Co., Ltd.
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