Semiconductor memory device including memory cells having a capa

Details Semiconductor memory device including memory cells having a capa Semiconductor memory device including memory cells having a capa

1996-07-19

1999-11-02

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257752, 257306, H01L 27108

Patent

active

059775831

ABSTRACT:
In a method of fabricating a COB DRAM cell, a polysilicon plug is formed on the source and drain in self-alignment with the gate electrode. A bit line contact and a storage electrode contact are formed on the polysilicon plug thereby to reduce the aspect ratio of both the bit line contact and the storage electrode contact. With the polysilicon plug formed in self-alignment with the gate electrode, short-circuiting of contacts of adjacent element regions and short-circuiting of the plugs of the source and drain will not occur, leading to high protection against misregistration. Moreover, an independent lithography process is not required for forming the polysilicon plug, and, therefore, the number of fabrication steps is reduced.

REFERENCES:
patent: 4649412 (1987-03-01), Iwase et al.
patent: 5235199 (1993-08-01), Hamamoto et al.
patent: 5392189 (1995-02-01), Fazen et al.
patent: 5434439 (1995-07-01), Ajika et al.
patent: 5459345 (1995-10-01), Okudaira et al.
patent: 5459346 (1995-10-01), Asakawa et al.
patent: 5486712 (1996-01-01), Arima
patent: 5519237 (1996-05-01), Itoh et al.
patent: 5541428 (1996-07-01), Nagatomo
patent: 5663585 (1997-09-01), Lee et al.

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