Static information storage and retrieval – Read/write circuit
Patent
1995-07-28
1997-05-06
Nguyen, Viet Q.
Static information storage and retrieval
Read/write circuit
395430, 36518908, 36518903, 36518907, 36518519, G11C 800
Patent
active
056277849
ABSTRACT:
A memory system capable of being configured for optimum operation after fabrication and method of controlling same. The system includes an array of memory cells arranged in a multiplicity of rows and a multiplicity of columns, with each cell located in one of the rows being coupled to a common word line and with each cell located in one of the columns being coupled to a common bit line. Control circuitry is included for controlling memory operations, with the memory operations including programming the memory cells; reading the memory cells and preferably programming the cells. A plurality of non-volatile data storage units are provided for storing control parameter data used by the control means for controlling the memory operations. Such control parameters may can include, for example, parameters for adjusting the magnitude and duration of voltage pulses applied to the memory for carrying out programming and erasing operations.
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U.S. Appln. No. 08/508,923, filed Jul. 28, 1995, entitled, Memory System Having Non-Volatile Data Storage Structure for Memory Control Parameters and Method.
Micron Quantum Devices Inc.
Nguyen Viet Q.
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