Dram sensing scheme

Details Dram sensing scheme Dram sensing scheme

1990-07-24

1997-05-06

Clawson, Jr., Joseph E.

Static information storage and retrieval

Systems using particular element

Capacitors

365203, 365208, 365210, 36523006, 36523004, G11C 1140

Patent

active

056277784

ABSTRACT:
A memory sensing scheme is disclosed which does not require the use of a dummy cell. The memory sensing scheme uses charge injection and parasitic capacitive coupling to distinguish the logical content of a memory cell.

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S.Sze, "Semiconductor Devices-Physics and Technology," .COPYRGT.1985 Bell Tel, Labs, Inc., TK7871.85.59883, pp. 43, 44.

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