Method for depositing polysilicon with discontinuous grain bound

Details Method for depositing polysilicon with discontinuous grain bound Method for depositing polysilicon with discontinuous grain bound

1997-07-07

1998-07-28

Lusignan, Michael

Coating processes

Electrical product produced

Metal coating

427255, 4272552, 4272557, C23C 1624

Patent

active

057860270

ABSTRACT:
A method for depositing a polysilicon layer on a substrate is provided. The method is performed in a LPCVD reaction chamber at a temperature of between 580.degree. C. to 650.degree. C. During the LPCVD process, at least two different silicon source gases, such as silane (SiH.sub.4), disilane (Si.sub.2 H.sub.6), trisilane (Si.sub.3 H.sub.8) or dichlorosilane (SiH.sub.2 Cl.sub.2) are absorbed onto the substrate to form random surface conditions. This grows the polysilicon layer with grain boundaries that are discontinuous and randomly oriented. The different silicon source gases can be injected into the reaction chamber at the same time or separately. In addition, a dopant gas such as phosphine (PH.sub.3), arsine (AsH.sub.3) or diborane (B.sub.2 H.sub.6) can also be injected into the reaction chamber to dope the polysilicon layer in situ.

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patent: 5438019 (1995-08-01), Sandhu
Ghandhi, Sorab K., VLSI Fabrication Principles, Silicon and Gallium Arsenide, Second Edition, pp. 537-539, 1994 (month unknown).
Wolf, S. and Rauber, R.N., Silicon Processing for the VLSI Era, Vol. 1 Process Technology, pp. 175-182, 1986 (month unknown).
Wu, T. H. Tom and Rosler, Richard S., "Properties of WSi.sub.x using dichloro-silane in a single wafer system", J. Vac. Sci. Technology, American Vacuum Society, pp. 1707-1713, Nov./Dec. 1988.

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