Mask for lithography

Details Mask for lithography Mask for lithography

1993-01-11

1993-11-16

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 4, 430 22, 378 34, 378 35, 2504922, G03F 900

Patent

active

052622576

ABSTRACT:
A mask structure according to an aspect of the invention includes a base having a first zone for an alignment pattern and a second zone for a circuit pattern; an alignment pattern forming material with which the alignment pattern is formed in the first zone; and a circuit pattern forming material with which the circuit pattern is formed in the second zone; wherein the alignment pattern forming material and the circuit pattern forming material are different from each other.

REFERENCES:
patent: 3742229 (1973-06-01), Smith et al.
patent: 4152601 (1979-05-01), Kadota et al.
patent: 4806442 (1989-02-01), Shirasaki et al.
patent: 4835078 (1989-05-01), Harvey et al.
patent: 4939052 (1990-07-01), Nakagawa
Feldman et al, "Application of Zone Plates to Alignment in X-Ray Lithography", Chemical Abstracts, vol. 97, p. 641, 1982.
Kinsohita, et al., "A Dual Grating Alignment Technique for X-Ray Lithography", J. Vac. Sci. Tech. B 1(4), Oct.-Dec. 1983, pp. 1276-1279.

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