Semiconductor memory device and manufacturing method thereof

Details Semiconductor memory device and manufacturing method thereof Semiconductor memory device and manufacturing method thereof

1996-08-01

1997-12-16

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Capacitors

257296, 257300, 257906, G11C 1124

Patent

active

056992912

ABSTRACT:
In a semiconductor memory device and a manufacturing method thereof, a barrier metal layer having a step h.sub.2 which is smaller than the step h.sub.1 at the upper end of a contact hole is formed on the surface opposite to the contact hole. The barrier metal layer has a nitrogen concentration gradient which becomes higher from its lower layer to its upper layer. A semiconductor memory device provided with a highly planer capacitor lower electrode, and a method of manufacturing the semiconductor memory device can thus be provided.

REFERENCES:
patent: 5448512 (1995-09-01), Hachisuka et al.
patent: 5567964 (1996-10-01), Kashihara et al.

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