Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-06-17
1999-11-02
Chaudhuri, Olik
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
257738, 22818022, 228246, H01L 21607
Patent
active
059769653
ABSTRACT:
A method for arranging metallic balls to form an array of bump electrodes comprises the steps of immersing a silicon template in ethanol dropping metallic balls through the ethanol onto the template to receive the metallic balls in the holes of the template. The metallic balls are free from cohesion caused by electrostatic charge or moisture. The template may be inclined in the ethanol. The holes are formed by anisotropic etching a silicon plate.
REFERENCES:
patent: 3251600 (1966-05-01), Warnberg
patent: 5601229 (1997-02-01), Nakazato et al.
patent: 5722579 (1998-03-01), Yu et al.
patent: 5750199 (1998-05-01), Sakemi
patent: 5888850 (1999-03-01), Havens et al.
Senba Naoji
Shimada Yuzo
Takahashi Nobuaki
Chaudhuri Olik
Duy Mai Anh
NEC Corporation
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