Method of forming an electrically conductive substrate interconn

Details Method of forming an electrically conductive substrate interconn Method of forming an electrically conductive substrate interconn

Filed on

1998-08-31

Date issued

1999-11-02

Examiner

Mulpuri, Savitri

Patent Class

Semiconductor device manufacturing: process

SubClass

Introduction of conductivity modifying dopant into...

SubSubClass

Ion implantation of dopant into semiconductor region

Other Related Categories

H01L 21265

Type

Patent

Status

active

Patent number

059769602

Description

ABSTRACT:
The invention is a semiconductor memory structure having an electrically conductive substrate interconnect formed to provide electrical continuity between a buried contact region and a source/drain region of a transistor without overlap of the buried contact region with the source/drain region. The electrically conductive substrate interconnect is formed during an ion bombardment of the substrate wherein the ions enter the substrate at an oblique angle and underlie at least a portion of a region utilized to control the amount of ions entering the substrate.

REFERENCES:
patent: 4443931 (1984-04-01), Baliga et al.
patent: 4513494 (1985-04-01), Batra
patent: 5013673 (1991-05-01), Fuse
patent: 5019888 (1991-05-01), Scott et al.
patent: 5126285 (1992-06-01), Kosa et al.
patent: 5158903 (1992-10-01), Hora et al.
patent: 5177030 (1993-01-01), Lee et al.
patent: 5206535 (1993-04-01), Namose
patent: 5217910 (1993-06-01), Shimizu et al.
patent: 5223445 (1993-06-01), Fuse
patent: 5270249 (1993-12-01), Fukuma
patent: 5285093 (1994-02-01), Lage et al.
patent: 5317197 (1994-05-01), Roberts
Wolff, S., "Silicon Processing for the ULSI Eng", Lattice Press, vol. Z, 300, (1990).

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