Method for forming large area or selective area SOI

Details Method for forming large area or selective area SOI Method for forming large area or selective area SOI

1997-05-01

1999-11-02

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438486, H01L 2704

Patent

active

059769599

ABSTRACT:
An inexpensive method for fabricating defect-free, device quality single crystalline silicon layer on an insulator or on a glass substrate has been developed and disclosed herewith. This is accomplished by bonding a single crystalline silicon seed to the insulating substrate, followed by depositing a polysilixon or amorphous silicon layer and zone-melting the seed and the polysilicon junction by an excimer laser. As the excimer laser scans from the molten seed-polysilicon junction to the next adjacent polysilicon, the preceding molten section recrystallized into device quality single crystalline layer, until the entire polysilicon layer transforms into single crystalline film. This invention has particular application in fields of optoelectronics, sensors, high temperature electronics, radiation hard devices, display devices, MOSFET, and FET devices.

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