Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1995-06-20

1997-05-06

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257295, 257296, 257300, 257306, 257309, 257751, H01L 2976, H01L 27108, H01L 2348

Patent

active

056273916

ABSTRACT:
A semiconductor device comprises silicon substrate 1 on which an integrated circuit is formed, first insulating layer 6 formed on silicon substrate 1, a capacitor comprising lower electrode 7 formed on first insulating layer 6, dielectric film 8 having a high dielectric constant and upper electrode 9, a second insulating film 11 having contact holes 13 which lead to lower electrode 7 and upper electrode 9 independently, diffusion barrier layer 17 which touches lower electrode 7 and upper electrode 9 at the bottom of contact holes 13, and interconnection layer 15 formed on diffusion barrier layer 17. In diffusion barrier layer 17 at the bottom of contact hole 13, a lamellar region made of granular crystal is formed.

REFERENCES:
patent: 4141022 (1979-02-01), Sigg et al.
patent: 5436477 (1995-07-01), Hashizume et al.

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