Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including isolation structure
Patent
1996-12-19
1999-11-02
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Including isolation structure
438294, 438328, 438423, 438542, 438919, H01L 21331
Patent
active
059769424
ABSTRACT:
An epitaxial layer with a doping of approximately 10.sup.12 atoms per cm.sup.2 is used in accordance with the resurf condition for the high-voltage circuit element in high-voltage integrated circuits of the resurf type. If the circuit comprises a zone which is provided in the epitaxial layer, which is of the same conductivity type as the substrate, and to which a high voltage is applied, the doping between this zone and the substrate must in addition be sufficiently high for preventing punch-through between the zone and the substrate. A known method of complying with these two requirements is to make the epitaxial layer very thick. It is found in practice, however, that this method is often not very well reproducible. According to the invention, the epitaxial layer is provided in the form of a high-ohmic layer which is doped from the upper side (3a) and from a buried layer (3b). The buried layer is blanket-deposited, which dispenses with a masking step, and is locally redoped by the island insulation zone (4).
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"A Versatile 700-1200-V IC Process For Analog and Switching Applications", by A.W. Ludikhuize, IEEE Trans. on Electron Devices, vol. 38, No. 7, Jul. 1991, pp. 1582-1589.
"High Voltage Thin Layer Devices (Resurf Devices)", by J.A. Appels et al, (Techn. Digests IEDM 1979, pp. 238/241.
Duong Khanh
Faller F. Brice
Jr. Carl Whitehead
U.S. Philips Corporation
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