Method for producing GaAs single crystal

Details Method for producing GaAs single crystal Method for producing GaAs single crystal

1984-01-16

1987-01-20

Richman, Barry S.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617SP, C30B 1522, C30B 2702

Patent

active

046378545

ABSTRACT:
A method for the production of a gallium arsenide single crystal which comprises bringing a seed crystal into contact with a fused layer of raw materials for the crystal while applying to the fused layer a magnetic field which has intensity enabling the temperature fluctuation in the neighborhood of the solid-liquid boundary in the fused layer to be repressed to within 1.degree. C., thereby effecting crystal growth.

REFERENCES:
patent: 3607139 (1971-09-01), Hanks
Utech et al., "Elimination of Solute Bonding in Indium Antimonide Crystals by Growth in a Magnetic Field", J. of Applied Physics, v 37, No. 9 (1966).
Terashima et al., "Electrical Res. of Undoped GaAs Single Crystals Grown by Magnetic Field Applied LEC Technique", Jap. J. of Applied Physics, 22(6) (1983).

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