Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1993-04-08
1997-05-06
Niebling, John
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
257751, 257757, 257758, 438664, 438643, 438974, H01L 2144
Patent
active
056271050
ABSTRACT:
A method for making an improved metal silicide layer on a silicon substrate by plasma bombardment of the substrate with Ne ions to remove the native oxide without damage or significant implantation of Ne atoms into said silicon, depositing a metal layer over the Ne etched surface and then rapidly thermally causing the metal layer to react with the underlying silicon.
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Day Mary E.
Delfino Michelangelo
Tsai Wilman
Everhart C.
Fisher Gerald M.
Niebling John
Varian Associates Inc.
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