Method for fabricating a thin film transistor using APCVD

Details Method for fabricating a thin film transistor using APCVD Method for fabricating a thin film transistor using APCVD

1994-07-28

1997-05-06

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

H01L 2184, H01L 21265

Patent

active

056270895

ABSTRACT:
This invention relates to a method for fabricating a thin film transistor used for LCD which can improve performance and productivity of an element by forming it with atmospheric pressure CVD method including processes for forming a gate electrode having sloped sides on an insulation substrate, forming a gate insulation film a semiconductor layer and a channel protection layer successively with atmospheric pressure chemical vapor deposition method on all over the insulation substrate, patterning the channel protection layer such that the channel protection layer is to have a narrower pattern width than the pattern width of the gate electrode remaining the channel protection layer only on the semiconductor layer over the gate electrode, forming an impurity injected semiconductor layer for making resistive contact by injecting impurities into the semiconductor layer using the channel protection layer as a mask, and forming source and drain electrodes over the channel protection layer, the impurity injected semiconductor layer and the gate insulation film so that upper surface of the channel protection layer between them can be exposed.

REFERENCES:
patent: 5156986 (1992-10-01), Wei et al.
patent: 5264710 (1993-11-01), Yamagishi et al.
patent: 5273920 (1993-12-01), Kwasnick et al.
patent: 5409851 (1995-04-01), Oh
Magarino et al., "Liquid Crystal Displays. II. Amorphous Silicon Active Matrix.", Revue Technique Thomson-CSF, Dec. 1986, vol. 18, No. 4, pp. 777-796.
Wolf et al., "Silicon Processing for the VLSI Era, vol. I", 1986, pp. 182-185.

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