Method of forming thin-film single crystal for semiconductor

Details Method of forming thin-film single crystal for semiconductor Method of forming thin-film single crystal for semiconductor

1995-05-11

1997-05-06

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438164, 438407, 438479, 438486, 117 8, H01L 21322, H01L 2184

Patent

active

056270860

ABSTRACT:
A thin-film semiconductor crystal is formed by depositing a thin film of amorphous silicon on a substrate, introducing ions selectively into a predetermined region of the thin film of amorphous silicon, and growing a single semiconductor crystal in the thin film of amorphous silicon by way of solid-phase crystal growth. A semiconductor device which employs the thin-film semiconductor crystal has a channel in the region where the ions are selectively introduced.

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Translation of JP 4-255213 (Hamada).

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