Method for making a bipolar transistor for the protection of an

Details Method for making a bipolar transistor for the protection of an Method for making a bipolar transistor for the protection of an

1995-01-27

1999-03-23

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257357, 257557, H01L 2362

Patent

active

058863869

ABSTRACT:
In a method for the making of a lateral bipolar transistor, the formation of a field oxide layer on the surface of the substrate, between the collector and the emitter of the protection transistor, is avoided. The lateral bipolar transistors made by the disclosed method are advantageously used to protect MOS type integrated circuits against electrical discharges.

REFERENCES:
patent: 4720737 (1988-01-01), Shirato
patent: 4990984 (1991-02-01), Misu
patent: 5204275 (1993-04-01), Lane
patent: 5281841 (1994-01-01), Van Roozendaal et al.
patent: 5581104 (1996-12-01), Lowrey et al.

Affiliated with

Also associated with

Rating

Method for making a bipolar transistor for the protection of an does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a bipolar transistor for the protection of an , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a bipolar transistor for the protection of an will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2128876