Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-11-07
1999-03-23
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
058863818
ABSTRACT:
The device presents a polysilicon layer extending over a wafer of semiconductor material, along the edge of the active region of the device, and partly over a thick field oxide layer which externally delimits the active region. The polysilicon layer forms both a field-plate region at its inner edge, and a Zener protection diode over the field oxide layer, outwards of and contiguous to the field-plate region. The terminals of the diode are respectively connected to the source metal region and the gate metal region; the diode therefore extends along the whole of the perimeter of the device, and presents an extensive junction area without greatly reducing the active area of the device.
REFERENCES:
patent: 4492974 (1985-01-01), Yoshida et al.
patent: 4688323 (1987-08-01), Yoshida et al.
patent: 4760434 (1988-07-01), Tsuzuki et al.
patent: 5266831 (1993-11-01), Phipps et al.
European Search Report from European Patent Application 95830476.8, filed Nov. 10, 1995.
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
Meier Stephen D.
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