Semiconductor device and pattern including varying transistor pa

Details Semiconductor device and pattern including varying transistor pa Semiconductor device and pattern including varying transistor pa

1997-11-04

1999-03-23

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

257395, 257401, H01L 2358

Patent

active

058863630

ABSTRACT:
To provide a simulation method capable of efficiently evaluating reliability of gate oxide films formed on the elements within short periods of time to evaluate characteristics of a semiconductor device made up of elements of any size and any number.
In a semiconductor device having transistors formed thereon, a pattern 1 for evaluating characteristics of a semiconductor device characterized in that gate area portions 9, gate bird's-beak portions 10 and LOCOS bird's-beak portions 11, are factors affecting the insulation breakdown of the gate oxide film, are rendered to be variable, so that the shapes of these portions can be handled as independent parameters.

REFERENCES:
patent: 4343877 (1982-08-01), Chiang
patent: 4413271 (1983-11-01), Gontowski, Jr. et al.
patent: 4672314 (1987-06-01), Kokkas
patent: 4739388 (1988-04-01), Packeiser et al.
patent: 5506441 (1996-04-01), Furuya

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