Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-01-10
1999-03-23
Booth, Richard A.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438666, 438660, H01L 2144
Patent
active
058858970
ABSTRACT:
A process is disclosed for making contact to differently doped regions in a semiconductor device which are disposed in a silicon substrate in different depths, a first region with a first dopant concentration and/or conductivity type and the smaller depth being disposed in a second region with a second dopant concentration and/or conductivity type and the greater depth, and a first metal layer being deposited on the first region. A second metal layer is deposited on a portion of the first metal layer, and the structure is subjected to a heat treatment in which contact is made to the first region through the first metal layer and to the second region through the first metal layer and the second metal layer.
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Booth Richard A.
Deutsche ITT Industries GmbH
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