Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1997-07-16

1999-03-23

Picardat, Kevin M.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438612, 438614, H01L 2144

Patent

active

058858911

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device, comprising the step of forming a pad electrode on an insulating film covering a semiconductor substrate, the step of forming a first metal layer on the pad electrode, the first metal layer being capable of forming a strong adhesive bond with the pad layer, followed by forming a second metal layer on the first metal layer, the second metal layer acting as a barrier layer and being capable of forming a strong adhesive bond with a solder, the step of forming a resist pattern on the second metal layer in a manner to cover that region which corresponds to the pad electrode, the step of etching the second metal layer using the resist pattern as a mask, the step of removing the resist pattern, the step of forming a solder layer selectively on the second metal layer, and the step of selectively etching the first metal layer using the solder layer as a mask.

REFERENCES:
patent: 4948754 (1990-08-01), Kondo et al.
patent: 4950623 (1990-08-01), Dishon
patent: 5048744 (1991-09-01), Chang et al.
patent: 5137845 (1992-08-01), Lochen et al.
patent: 5162257 (1992-11-01), Yung
patent: 5268072 (1993-12-01), Agarwala et al.
patent: 5773359 (1998-06-01), Mitchell et al.

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