Method of manufacturing thin-film transistor

Details Method of manufacturing thin-film transistor Method of manufacturing thin-film transistor

1998-01-02

1999-03-23

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438158, 438763, H01L 2184

Patent

active

058858580

ABSTRACT:
A thin-film transistor (3, 5a, 5b and 5c) is covered with a first silicon nitride film (9) formed by an LPCVD method. A first silicon oxide film (6) is formed on the first silicon nitride film (9). A silicon nitride film (7), i.e., passivation film which is formed by a plasma CVD method is provided on the first silicon oxide film (6).

REFERENCES:
patent: 4520380 (1985-05-01), Ovshinsky et al.
patent: 4624737 (1986-11-01), Shimbo
patent: 5198379 (1993-03-01), Adan
patent: 5541128 (1996-07-01), Kwasnick et al.
"Leakage Current Reduction in Sub-Micron Channel Poly-Si TFT's" by Kitajima et al., Extended Abstracts of . . . , Aug. 27-29, 1991, pp. 174-176.
"The Effect of Flourine in Silicon Dioxide Gate Dielectrics" by Wright et al., IEEE Transaction on Electron Devices, vol. 36, No. 5, May 1989, pp. 879-889.
"Negative Bias Temperature Instability in Poly-Si TFT's" by Maeda et al., 1993 VLSI Symposium, pp. 29-30. No Month.
"Water-Related Threshold Voltage Instability of Polysilicon TFT's", Okuyama et al., IEDM 93, pp. 527-530. No Month.
Sze, "VLSI Technology," 1988, pp. 261-263. No Month.

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