Semiconductor device having an elevated active region formed fro

Details Semiconductor device having an elevated active region formed fro Semiconductor device having an elevated active region formed fro

1997-01-08

1999-03-23

Dutton, Brian

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438626, 438692, 438301, H01L 2122, H01L 2138, H01L 214763, H01L 21336

Patent

active

058857613

ABSTRACT:
A semiconductor device and process for manufacture thereof is disclosed in which an elevated, active polysilicon region is formed by forming a gate electrode
itride layer structure on a surface of a semiconductor substrate with spacers formed on adjacent walls to define an active region of the substrate. A thick polysilicon layer is formed over the resultant structure and then planarized leaving a portion of the polysilicon layer above the active region of the substrate. The remaining portion is doped to form an elevated active region.

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S. Wolf, Silicon Processing for the VLSI Era, vol. 2: Processing Integration, pp. 154-169, copyright 1990.

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