Processing for forming low resistivity titanium nitride films

Details Processing for forming low resistivity titanium nitride films Processing for forming low resistivity titanium nitride films

1992-02-10

1994-05-03

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

427343, C23C 1634, B05D 304

Patent

active

053086554

ABSTRACT:
A process for forming low resistivity titanium nitride films on a silicon substrate by chemical vapor deposition includes a post-deposition ammonia anneal to provide hydrogen atoms which chemically react with chlorine atoms entrained within the titanium nitride film. The titanium nitride film is deposited by placing the silicon substrate in a reaction chamber, heating the silicon substrate within the reaction chamber, initially passing both TiCl.sub.4 gas and NH.sub.3 gas into the reaction chamber over the silicon substrate to deposit titanium nitride upon a surface of the silicon substrate, and thereafter discontinuing the flow of TiCl.sub.4 gas while continuing to pass NH.sub.3 gas into the reaction chamber over the silicon substrate to react with and remove residual chlorine atoms retained by the deposited titanium nitride film.

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patent: 4803127 (1989-02-01), Hakim
Travis et al, "A Scalable Submicron Contact Technology Using Conformal LPCVD TiN", ilDEM Conference Proceedings, Dec. 1990.
Buiting, et al., "Kinetical Aspects of the LPCVD of Titanium Nitride from Titanium Tetrachloride and Ammonia", J. Electrochem. Soc., vol. 138, No. 2, Feb. 1991, pp. 500-505.
F. Pintchovski, et al., "LPCVD Titanium Nitride--Deposition, Properties, and Application to ULSI", Tungsten and Other Refractory Metals for ULSI Applications, No. IV, 1989, pp. 275-282.
A. Sherman, "Growth and Properties of LPCVD Titanium Nitride As A Diffusion Barrier for Silicon Device Technology", J. Electrochm, Soc., vol. 137, No. 6, Jun., 1990.
S. R. Kurtz et al, "Chemical Vapor Deposition of Titanium Nitride at Low Temperatures", Thin Solid Films, 140 (1986), pp. 277-290.
X. Xiang, Plasma Chemical Vapour Deposition of TiC, TiC/TiN and Dispersed Ti(CN) Proceedings of the 1986 China-Japan Symposium on Thin Films Beijing China Sep. 22-24, 1986.

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